絶縁ゲートドライバー

安定化バイポーラ出力対応のセルフパワー絶縁型GaN FETドライバ

AHV85111

AHV85111は、GaN FET向けに高精度の柔軟なゲートドライブを提供します。安定化されたバイポーラ出力、調整可能な正電圧レール、内蔵のバイアス電源により、設計を簡素化してdv/dt耐性を向上させます。

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Product Details

Top Features

Transformer isolation barrier
Power-Thru integrated isolated bias
- No need for high-side bootstrap
- No need for external secondary-side bias
AEC-Q100 Grade 2 qualification
Bipolar drive output with adjustable regulated positive rail
Built-in primary-side 3.3V REF bias output
50ns propagation delay
Separate drive output pins: pull-up (2.8 Ω) and pull-down (1.0 Ω)
Supply voltage 10.8 V < VDRV < 13.2 V
Undervoltage lockout on primary VDRV and secondary VSEC
Enable pin with fast response
Continuous ON capability—no need to recycle IN or recharge bootstrap capacitor
CMTI > 100 V/ns dv/dt immunity
Creepage distance 8.4 mm
Safety Regulatory Approvals
- 5 kV RMS VISO per UL 1577
- 8 kV pk VIOTM maximum transient isolation voltage
- 1 kV pk maximum working isolation voltage

Target Application

Part Number Specifications and Availability

AHV85111 Product Overview

The AHV85111 isolated gate driver is optimized for driving GaN FETs in multiple applications. An isolated dual positive/negative output bias supply is integrated into the driver device, eliminating external gate drive auxiliary bias supply or high-side bootstrap.