隔离式栅极驱动器

Self-Powered Single-Channel Isolated GaN FET Gate Driver with Power-Thru Integrated Isolated Bias Supply

AHV85110

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Evaluation Board

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Product Details

Top Features

Transformer isolation barrier
Power-Thru integrated isolated bias
- No need for high-side bootstrap
- No need for external secondary-side bias
AEC-Q100 Grade 2 qualification
50 ns propagation delay
Separate drive output pins: pull-up (2.8 Ω) and pull-down (1.0 Ω)
Supply voltage 10.5 V < VDRV < 13.2 V
Undervoltage lockout on primary VDRV and secondary VSEC
Enable pin with fast response
Continuous ON capability—no need to recycle IN or recharge bootstrap capacitor
CMTI > 100 V/ns dv/dt immunity
Creepage distance 8.4 mm
Safety Regulatory Approvals
- 5 kV RMS VISO per UL 1577
- 8 kV pk VIOTM maximum transient isolation voltage
- 1 kV pk maximum working isolation voltage

Target Application

Part Number Specifications and Availability

HV Isolated Evaluation Boards

EVK PN	Switch	Supplier / PN	Description	Gate Driver Used
APEK85110KNH-01-T-MH Evaluation Board User Guide (GaN Systems FETs)	E-Mode GaN	GaN Systems GS66516B	Half-bridge bipolar driver-switch board	AHV85110	Buy Now
APEK85110KNH-05-T-MH Evaluation Board User Guide (Nexperia FETs)	E-Mode GaN	Nexperia GAN080-650EBE	Half-bridge bipolar driver-switch board	AHV85110	Buy Now
APEK85110KNH-06-T Evaluation Board User Guide (Transphorm FETs)	GaN	Transphorm TP65H070G4QS	Half-bridge bipolar driver-switch board	AHV85110	Buy Now

AHV85110 Product Video

The AHV85110 isolated gate driver is optimized for driving GaNFETs in multiple applications and topologies. An isolated output bias supply is integrated into the driver device, eliminating the need for any external gate drive auxiliary bias supply or high-side bootstrap. This greatly simplifies the system design and reduces EMI through reduced total common-mode (CM) capacitance. It also allows the driving of a floating switch in any location in a switching power topology.

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